| PART |
Description |
Maker |
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| RT1P137P |
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
SWITCHING SILICON PNP EPITAXIAL TRANSISTOR
|
List of Unclassifed Manufacturers
Isahaya Electronics Corporation
ETC[ETC]
|
| HVD145 |
Diodes>Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
| HVD132 |
Diodes>Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
| MMBT3904 SMBT3904 SMBT3904/MMBT3904 |
Switching Transistors - NPN Silicon Switching Transistor with high current gain
|
INFINEON[Infineon Technologies AG]
|
| BAS21U BAS21 BAS21-03W |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| HVU145 |
Diodes>Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
| Q62702-A3471 BAW78M |
From old datasheet system
Silicon Switching Diode (Switching applications High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
| H5N3003P H5N3003 |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
